Hysteresis suppression in self-assembled single-wall nanotube field effect transistors
نویسندگان
چکیده
We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO2/Si. r 2007 Elsevier B.V. All rights reserved. PACS: 73.63.Fg; 73.63. b; 81.65. b
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